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Authors: D. Wang, T. N. L Tran, S. Poelman, T. Reep, J. Zhang, G. Roelkens, B. Kuyken
Title: Heterogeneous integration of O-band GaAs QD-on-SiN mode-locked comb laser
Format: International Conference Proceedings
Publication date: Accepted for publication. Not yet published
Journal/Conference/Book: SPIE Photonics West 2025
Location: San Francisco, United States
Citations: Look up on Google Scholar
Download: Download this Publication (1.6MB) (1.6MB)

Abstract

We demonstrate an O-band mode-locked laser through the heterogeneous integration of a GaAs-based quantum dot optical amplifier onto a passive SiN cavity using micro-transfer printing. The laser, a Fabry-Perot cavity with Sagnac mirrors, shows an ultra-low threshold current of 20 mA at 18 Celsius and can deliver nearly 0.4 mW of single-side waveguide-coupled power. The spectral peak can be tuned from 1296 nm to 1334 nm as the temperature increases from 10 to 50 Celsius. Mode-locking is achieved with an injection current of 80 mA and an SA voltage of -0.6 V, generating a clear RF beat note at 28.6 GHz with a signal-to-noise ratio of 20 dB. Optimization can further broaden the spectrum and improve output power.

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