| Authors: | J. Zhang, A. Gocalinksaka, E. Pelucchi, J. Van Campenhout, G. Lepage, P. Verheyen, B. Corbett, G. Roelkens | | Title: | III-V on silicon widely tunable laser realised by micro-transfer printing | | Format: | International Conference Proceedings | | Publication date: | 9/2019 | | Journal/Conference/Book: | European Conference on Optical Communication
| | Volume(Issue): | p.paper 4459381 | | Location: | Dublin, Ireland | | Citations: | Look up on Google Scholar
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Abstract
We present a C-band widely-tunable III-V-on-silicon laser (50 nm tuning, 5.2 dBm maximum power, 300 kHz minimum linewidth) realized through a micro-transfer-printing approach, in which III-V SOAs are pre-fabricated on a III-V substrate transferred using an elastomeric stamp to the silicon photonic circuit defining the laser cavity. Related Research Topics
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