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Authors: A. Yimam, D. Colucci, C. Caer, D. Yudistiri, Y. De Koninck, H. Sar, M. Barishnikova, P. Verheyen, J. Van Campenhout, B. Kunert, G. Morthier, D. Van Thourhout
Title: Extraction of Recombination Coefficients for Electrically Injected InGaAs/GaAs Monolithic Nano-ridge Laser Diodes Integrated on Silicon
Format: International Conference Poster
Publication date: 4/2025
Journal/Conference/Book: IEEE Silicon Photonics Conference
Editor/Publisher: IEEE , 
Location: London, United Kingdom
Citations: Look up on Google Scholar
Download: Download this Publication (1.7MB) (1.7MB)

Abstract

We present the extraction of recombination coefficients
for electrically injected monolithic nano-ridge laser diodes
by first determining the effective carrier capture time from the
small signal modulation response. The effect of the nano-ridge
box size on the recombination coefficients is investigated.

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