| Authors: | Y. Kim, D. Yudistira, B. Kunert, M. Baryshnikova, R. Alcotte, C. Ozdemir, S. Kim, S. Lardenois, P. Verheyen, J. Van Campenhout, M. Pantouvaki | | Title: | Monolithic GaAs/Si V-groove depletion-type optical phase shifters integrated in a 300 mm Si photonics platform | | Format: | International Journal | | Publication date: | 5/2022 | | Journal/Conference/Book: | Photonics Research
| | Volume(Issue): | 10 p.1509-1516 | | DOI: | 10.1364/PRJ.451821 | | Citations: | 1 (Dimensions.ai - last update: 24/11/2024)
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Abstract
We demonstrate monolithically integrated n-GaAs/p-Si depletion-type optical phase shifters fabricated on a 300 mm wafer-scale Si photonics platform. We measured the phase shifter performance using Mach–Zehnder modulators with the GaAs/Si optical phase shifters in both arms. A modulation efficiency of 𝑉𝜋𝐿 as low as 0.3 V·cm has been achieved, which is much lower compared to a carrier-depletion type Si optical phase shifter with pn junction. While propagation loss is relatively high at ∼6.5 dB/mm, the modulator length can be reduced by the factor of ∼4.2 for the same optical modulation amplitude of a Si reference Mach–Zehnder modulator, owing to the high modulation efficiency of the shifters. |
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