Abstract
Lead Zirconate Titanate (PZT) is one of the widely used material for energy harvesting owing to its high piezoelectric and electromechanical coupling coefficient as well as high temperature compatibility (Curie point∼370◦C).Since the centro-symmetric Si lacks piezoelectricity, the integration of a textured PZT thin film on the silicon photonic platform can be an alternative to compensate it. Therefore, this hybrid integration can open a wide range of electro-optomechanical applications combining the benefits of PZT and mature silicon photonics platform. In this work, we directly deposit a PZT film on silicon-on-insulator (SOI) using a transparent Lanthanide based seed layer making it photonics compatible,4unlike the traditional PZT film grown with metallic Platinum buffer layer which introduces extra optical loss in the device.5We fabricate unimorph micro-cantilever beams with the hybrid PZT-SOI chip and demonstrate its piezoelectric actuation. The LDV measurement on these actuators give a displacement in the range 10-20 nm with the applied RF Vpp= 10V at the fundamental resonance frequencies in the range 1-3 MHz. Next, a PZT based cantilever is integrated with a photonic component such as ring-resonator to realize a low power tunable coupler. Thus, we demonstrate an integrated PZT film based transducer, which combines a high piezoelectric material (PZT) with SOI photonic platform. This can open the possibilities to achieve an efficient electro-optomechanical coupling and low-power MEMS applications in the Si photonic integrated circuit. Related Research Topics
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