Abstract
We demonstrate p-i-n InGaAs/GaAs quantum well nano-ridge waveguide photodetectors epitaxially grown and fully processed on a 300mm Si wafer. The devices exhibit low dark currents of 10pA, current density of 1.43 x 10-5 A/cm2, at -1V bias and internal responsivities of 0.48A/W at 1020nm wavelength. Related Research Topics
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