Abstract

Gallium phosphide-on-insulator (GaP-OI) has recently emerged as a promising platform for integrated nonlinear photonics due to its intrinsic material properties. Here we demonstrate the transfer of GaP layers to an oxidized silicon wafer using micro-transfer printing as a new approach for versatile future (hetero)-integrations.

Related Research Topics

• Chi(2) nonlinear optics in silicon-based waveguide circuits
• Transfer printing technology

Related Projects

• ERC-StG: ELECTRIC (Chip Scale Electrically Powered Optical Frequency Combs )