| Authors: | A. Raza, S. Clemmen, M. Van Daele, J. Dendooven, M.B. E. Griffiths, S.T. Barry, A. Skirtach, C. Detavernier, R. Baets | | Title: | On-chip surface enhanced Raman spectroscopy using ALD grown plasmonic nanotrenches integrated with a silicon nitride slot waveguide | | Format: | International Conference Proceedings | | Publication date: | 4/2019 | | Journal/Conference/Book: | European Conference on Integrated Optics (ECIO 2019)
| | Volume(Issue): | 21 p.paper T.B1.3 | | Location: | Gent, Belgium | | Citations: | Look up on Google Scholar
| | Download: |
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Abstract
We present an enhanced Raman spectroscopy using sub 10 nm plasmonic nanotrenches directly grown on a
silicon nitride slot waveguide using atomic layer deposition (ALD). A novel ALD process for gold deposition at
100 C is used, the precursor and reactant used for this process are Me3AuPMe3 and H2 plasma, respectively.
The fabricated Raman sensor exhibits 1.5 108 pump to Stokes conversion efficiency for a monolayer
of 4-Nitrophenol. This is at least an order of magnitude higher than the state of art nanoplasmonic waveguide
based Raman sensors. |
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