Authors:	S. Uvin, S. Kumari, A. De Groote, S. Verstuyft, G. Lepage, P. Verheyen, J. Van Campenhout, G. Morthier, D. Van Thourhout, G. Roelkens
Title:	1.3 um InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding
Format:	International Journal
Publication date:	7/2018
Journal/Conference/Book:	Optics Express
Volume(Issue):	26(14) p.18302-18309
DOI:	10.1364/oe.26.018302
Citations:	36 (Dimensions.ai - last update: 24/11/2024) 25 (OpenCitations - last update: 27/6/2024) Look up on Google Scholar
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Abstract

In this paper we report a single mode InAs/GaAs quantum dot distributed feedback laser at 1.3 um wavelength heterogeneously integrated on a Si photonics waveguide circuit. Single mode lasing around 1300 nm with a side-mode suppression ratio higher than 40 dB is demonstrated. High temperature operation with continuous wave lasing up to 100 C is obtained. Threshold current densities as low as 205 A/cm2 were measured. These devices are attractive candidates to use in uncooled silicon photonic transceivers in data centers.

Related Research Topics

• GaAs on Si lasers for optical interconnect applications