| Authors: | S. Kumari, J. S. Gustavsson, E. P. Haglund, J. Bengtsson, A. Larsson, G. Roelkens, R. Baets | | Title: | Design of an 845 nm GaAs vertical-cavity silicon integrated laser with an intra-cavity grating for coupling to a SiN waveguide circuit | | Format: | International Journal | | Publication date: | 6/2017 | | Journal/Conference/Book: | IEEE Photonics Journal
| | Volume(Issue): | 9(4) p.1504109 | | DOI: | 10.1109/jphot.2017.2717380 | | Citations: | 11 (Dimensions.ai - last update: 24/11/2024)
7 (OpenCitations - last update: 27/6/2024)
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Abstract
A short-wavelength hybrid GaAs vertical-cavity silicon integrated laser (VCSIL)
with in-plane waveguide coupling has been designed and optimized using numerical
simulations. A shallow etched silicon nitride (SiN) grating is placed inside the cavity of the
hybrid vertical-cavity silicon integrated laser to both set the polarization state of the resonant
optical field and to enable output coupling to a SiN waveguide with high efficiency. The
numerical simulations predict that for apertures of 4 and 6 microns oxide-confined VCSILs
operating at 845 nm wavelength, a slope efficiency for the light coupled to the waveguide of
0.18 and 0.22 mW/mA is achievable respectively while maintaining a low threshold gain of
583 and 589 cm-1 respectively for the lasing. Related Research Topics
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