Authors:	S. Dhoore, G. Roelkens, G. Morthier
Title:	III-V-on-silicon three-section DBR laser with over 12 nm continuous tuning range
Format:	International Journal
Publication date:	3/2017
Journal/Conference/Book:	Optics Letters
Volume(Issue):	42(6) p.1121-1124
DOI:	10.1364/OL.42.001121
Citations:	16 (Dimensions.ai - last update: 24/11/2024) 15 (OpenCitations - last update: 27/6/2024) Look up on Google Scholar
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Abstract

Device and tuning characteristics of a novel heterogeneously integrated III-V-on-silicon three-section distributed Bragg reflector laser are presented. The laser exhibits a continuous wavelength tuning range of more than 12 nm. Thermal tuning is achieved through carrier injection in the passive tuning layer of a III-V tunable twin-guide membrane. Single-mode lasing with a sidemode suppression ratio larger than 30 dB over the entire tuning range is realised through implementation of a sidewall-corrugated silicon-on-insulator waveguide grating as one of the laser mirrors.

Related Research Topics

• InP on Si lasers for telecommunication applications
• Fast and widely tunable III-V/SOI DFB and DBR lasers

Related Projects

• IAP: Photonics@be (Photonics@be)