| Authors: | E. P. Haglund, S. Kumari, J. Gustavsson, P. Westbergh, G. Roelkens, R. Baets, A.Larsson | | Title: | Dynamic Properties of Silicon Integrated Short Wavelength Hybrid Cavity VCSEL | | Format: | International Conference Proceedings | | Publication date: | 2/2016 | | Journal/Conference/Book: | SPIE Photonics West , United States
| | Volume(Issue): | 9766 p.976607 | | Location: | San Francisco, | | DOI: | 10.1117/12.2207301 | | Citations: | 2 (Dimensions.ai - last update: 24/11/2024)
1 (OpenCitations - last update: 19/4/2024)
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Abstract
We present a vertical-cavity surface-emitting laser (VCSEL) where a GaAs “half-VCSEL” is attached to a
silicon-based dielectric distributed Bragg reflector using ultra-thin divinylsiloxane-bis-benzocyclobutene
(DVS-BCB) adhesive bonding, creating a hybrid cavity where the optical field extends over both the GaAs-
and the Si-based parts of the cavity. A VCSEL with an oxide aperture diameter of 7 µm and a threshold
current of 0.7 mA provides 1.5 mW output power at 844 nm. With sufficient damping of the modulation
response, set by the photon lifetime, the VCSEL exhibits a modulation bandwidth >10 GHz and can
transmit data up to 15 Related Research Topics
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