| Authors: | Y. Hu, M. Pantouvaki, S. Brems, I. Asselberghs, C. Huyghebaert, M. Geisler, C. Alessandri, R. Baets, P. Absil, D. Van Thourhout, J. Van Campenhout | | Title: | Broadband 10Gb/s Graphene Electro-Absorption Modulator on Silicon for Chip-Level Optical Interconnects | | Format: | International Conference Proceedings | | Publication date: | 12/2014 | | Journal/Conference/Book: | Electron Devices Meeting (IEDM)
| | Editor/Publisher: | IEEE International, | | Location: | San Francisco, United States | | DOI: | 10.1109/iedm.2014.7046991 | | Citations: | 31 (Dimensions.ai - last update: 24/11/2024)
22 (OpenCitations - last update: 27/6/2024)
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Abstract
We report the first silicon integrated graphene optical
electro-absorption modulator capable of 10Gb/s modulation speed. We demonstrate low insertion loss and low drive voltage combined with broadband and athermal operation in a compact hybrid graphene-Si device, outperforming Si(Ge)optical modulators for future chip-level optical interconnect application. Related Research Topics
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