Authors:	M. Muneeb, X. Chen, P. Verheyen, G. Lepage, S. Pathak, E.M.P. Ryckeboer, A. Malik, B. Kuyken, M. Nedeljkovic, J. Van Campenhout, G. Mashanovich, G. Roelkens
Title:	Demonstration of silicon on insulator mid-infrared spectrometers operating at 3.8um
Format:	International Journal
Publication date:	5/2013
Journal/Conference/Book:	Optics Express
Editor/Publisher:	Optical Society of America,
Volume(Issue):	21(10) p.11659-11669
DOI:	10.1364/OE.21.011659
Citations:	111 (Dimensions.ai - last update: 24/11/2024) 77 (OpenCitations - last update: 10/5/2024) Look up on Google Scholar
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Abstract

The design and characterization of silicon-on-insulator midinfrared spectrometers operating at 3.8ìm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk
characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm.

Related Research Topics

• Low-loss Nanophotonic waveguides (1999-2010)
• Photo-spectrometer based on heterogeneous integration (2004-2009)
• Silicon based integrated optical gas sensing
• Silicon Arrayed Waveguide Gratings (AWG)
• mid-infrared silicon-based waveguide circuit technology

Related Projects

• ERC-StG: MIRACLE (Mid-InfraRed active photonic integrated cicuits for life sciences and environment)