| Authors: | Z. Wang, M. Pantouvaki, Mohan Paladugu, B. Tian, Richard Olivier, Bender Hugo, Clement Merckling, Weiming Guo, Johan Dekoster, Matty Caymax, J Van Campenhout, D. Van Thourhout | | Title: | High Quality InP Localized Growth on Silicon for Photonics Applications | | Format: | International Conference Presentation | | Publication date: | 8/2013 | | Journal/Conference/Book: | Progress In Electromagnetics Research Symposium (PIERS 2013)
| | Volume(Issue): | p.68 | | Location: | Stockholm, Sweden | | Citations: | Look up on Google Scholar
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Abstract
Over the last decade, \silicon photonics" has evolved from a relatively new topic to
one of the most competitive research ¯eld. It holds great promises to many applications, such as
optical interconnects, sensing, and next generation commercial electronics. Great achievements
have been made, although the indirect bandgap nature of silicon hinders the realization of active
devices. Besides the e®orts of bonding IIIVs materials on silicon for active applications, the
possibility of integrating IIIVs on silicon in the epitaxy level reattracts enormous interests from
the material science society. In this work, we present recent results of localized InP growth on
exactly [001] oriented silicon substrate. Related Research Topics
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