Authors:	G. Duan, C. Jany, A. Le Liepvre, J.G. Provost, D. Make, F. Lelarge, M. Lamponi, F. Poingt, J.M. Fedeli, S. Messaoudene, D. Bordel, S. Brision, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D.J. Thomson, F.Y. Gardes, G.T, Reed
Title:	10Gb/s integrated tunable hybrid III-V/Si laser and silicon MZ modulator
Format:	International Conference Proceedings
Publication date:	9/2012
Journal/Conference/Book:	38th European Conference and Exhibition on Optical Communication (ECOC 2012)
Volume(Issue):	p.paper Tu.4.E.2
Location:	Amsterdam, Netherlands
DOI:	10.1364/eceoc.2012.tu.4.e.2
Citations:	27 (Dimensions.ai - last update: 24/11/2024) 10 (OpenCitations - last update: 10/5/2024) Look up on Google Scholar
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Abstract

We demonstrate a tunable transmitter, integrating a hybrid III-V/Si laser fabricated by wafer bonding and a silicon Mach-Zehnder modulator. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s.