| Authors: | Di Liang, G. Roelkens, R. Baets, John E. Bowers | | Title: | Hybrid integrated platforms for silicon photonics | | Format: | International Journal | | Publication date: | 3/2010 | | Journal/Conference/Book: | Materials
| | Volume(Issue): | 3(3) p.1782-1802 | | DOI: | 10.3390/ma3031782 | | Citations: | 260 (Dimensions.ai - last update: 23/2/2025)
140 (OpenCitations - last update: 3/5/2025)
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Abstract
A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials,the other technique using an organic bonding agent. Issues such as bonding process and
mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize highperformance active and passive photonic devices on low-cost silicon wafers is discussed.Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics Related Research Topics
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