Authors:	K. Quang Le
Title:	Finite Element Analysis of Quantum States in Layered Quantum Semiconductor Structures with Band Nonparabolicity Effect
Format:	International Journal
Publication date:	11/2008
Journal/Conference/Book:	Microwave and Optical Technology Letters
Volume(Issue):	51(1) p.1-5
DOI:	10.1002/mop.23976
Citations:	16 (Dimensions.ai - last update: 24/11/2024) 11 (OpenCitations - last update: 3/5/2024) Look up on Google Scholar
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Abstract

A simultaneous calculation of eigenstates in the layered quantum semiconductor structures using the finite element method is developed. We propose the approximation to linearize the nonlinear eigenvalue problem due to nonparabolicity effect and find the application range for the approach. The finite element calculation results show an excellent agreement with published results obtained by other authors. In addition, our calculated results confirm that the effect of nonparabolicity on the transition energy shift is considerably large for higher subbands and should be taken into account in the simulation and design of light emitters based on layered quantum semiconductor structures.