Authors:	P.I. Borel, L.H. Frandsen, A. Harpoeth, J.B. Leon, H. Liu, M. Kristensen, W. Bogaerts, P. Dumon, R. Baets, V. Wiaux, S. Beckx, J. Wouters
Title:	Bandwidth engineering of photonic crystal waveguide bends
Format:	International Journal
Publication date:	10/2004
Journal/Conference/Book:	Electronics Letters
Volume(Issue):	40(20) p.1263-1264
DOI:	10.1049/el:20046206
Citations:	21 (Dimensions.ai - last update: 24/11/2024) 17 (OpenCitations - last update: 3/5/2024) Look up on Google Scholar
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Abstract

An effective design principle has been applied to photonic crystal waveguide bends fabricated in Silicon-on-insulator material using deep UV lithography resulting in a large increase in the low-loss bandwidth of the bends. Furthermore, it is experimentally demonstrated that the absolute bandwidth range can be adjusted in a post-fabrication thermal oxidation process.

Related Research Topics

• Silicon (nano)photonic devices fabrication with 193nm and 248nm (DUV) Optical lithography (1999-2012)

Related Projects

• IST: PICCO (Photonic Integrated Circuits using photonic Crystal Optics)
• IST: ePIXnet (European Network of Excellence on Photonic Integrated Components and Circuits)
• NEDO: PhotoCryst (Topographic Optimization of photonic crystals and application to ultrasmall and ultra-fast optical signal processing devices)