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ESA2.5-CCN3: 

Study and development of exteded wavelength InGaAs detectors

Duration: 1/12/97-31/1/99 (Finished)

Partners:

  • Thomson CSF

Objective:

  • Explore new technologies to reduce the dislocation density in InGaAs absorbing layers at extended wavelengths (2.5 m m)

INTEC's Role:

  • Investigate compliant substrate technology to reduce dislocation density
  • Improve uniformity and yield of large 2D-InGaAs detector arrays

Publications in the framework of this project (1)

        International Conferences

      1. D. Van Thourhout, Z. Wang, B. Tian, Y. Hu, J. George, J. Beeckman, M. Pantouvaki, C. Merckling, I. Asselberghs, S. Brems, P. Absil, M. Hsu, J. Van Campenhout, New materials and devices for optical interconnect, Opto-Electronics and Communications Conference (OECC), 2015 (invited), China, doi:10.1109/OECC.2015.7340154 (2015).