Union Miniere - INTEC: 

Development of epitaxial layers and components on Ge-substrates

Duration: 1/2/98-31/1/2001

Objective:

• To demonstrate the feasibility of Ge-substrates for the fabrication of optoelectronic components and magnetic sensors

INTEC's Role:

• MOCVD- growth and optimisation of InAlGaAs/GaAs, InAlGaP/GaAs, InGaN/GaN, GaInNAs/GaAs, InGaAsP/InP layers on Ge-substrates
• Fabrication of 670 nm, 780 nm, 850 nm, 980 nm, 1300 nm LEDs on Ge-substrates
• Fabrication of 980 nm laserdiodes on Ge
• Fabrication of InGaAsP/InP waveguides on Ge